Semiconductor apparatus with tungstein nitride
US5780908A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 1996 |
| Grant date | Jul 14, 1998 |
| Priority date | — |
| Expiry date | Nov 19, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/924
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Through exposure of the top surface of a tungsten film to plasma of a gas including nitrogen at a temperature of 550.degree. C. or less, a tungsten nitride layer having a structure in which nitrogen atoms and tungsten atoms are bonded is formed in an area in the vicinity of the surface of the tungsten film. Then, an aluminum alloy film is deposited on the tungsten film, thereby forming a metallic interconnection. Since the nitrogen atoms and the tungsten atoms are bonded in the tungsten nitride layer formed by such plasma nitridation, the tungsten nitric layer not only has a good barrier function to prevent the diffusion of other metal atoms but also can be formed in a small thickness. Accordingly, formation of an alloy layer with a high resistance otherwise caused due to counter diffusion during an annealing process and a junction leakage can be avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.