Asymmetric contacted metal-semiconductor-metal photodetectors
US5780916A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 1995 |
| Grant date | Jul 14, 1998 |
| Priority date | — |
| Expiry date | Oct 10, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2275
Abstract
A metal-semiconductor-metal (MSM) photodetector, specifically a new, improved low noise device is disclosed. The disclosed device is a MSM photodiode in which the cathode and anode are made of different materials with optimal Schottky barrier heights. One of these materials is chosen to provide a high ratio of Schottky barrier height to hole transport and the other to provide a high ratio of Schottky barrier height to electron transport. The disclosed MSM photodetector is designed to allow each Schottky barrier to be individually optimized to the point that a wide bandgap Schottky barrier enhancement layer and its associated heterointerface may become unnecessary. Elimination of the charge buildup at the heterointerface enhances carrier extraction resulting in photodetectors with elevated quantum efficiency and enhanced bandwidths.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.