Formation of silicided junctions in deep submicron MOSFETS by defect enhanced CoSi2 formation

US5780929A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Heinrich Zeininger · Obermichelbach, DE
• Christoph Zeller · Ottobrunn, DE
• Udo Schwalke · Heldenstein, DE
• Uwe Doebler · Berlin, DE
• Wilfried Haensch · Somers, US

Key dates

• Filing date: Nov 5, 1996
• Grant date: Jul 14, 1998
• Expiry date: Nov 5, 2016

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/974
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Deep submicran mosfets with defect enhanced CoSi2 formation and improved silicided junctions. A silicon wafer having a diffusion window is first precleaned with hydrofluoric acid. After the HF precleaning, the silicon wafer is transferred to a conventional cobalt sputtering tool where it is sputter cleaned by bombardment with low energy Ar+ions so as to form an ultra-shallow damage region. After the sputter cleaning, and without removing the wafer from the sputtering tool, Cobalt metal is deposited on the silicon wafer at room temperature and a CoSi2 layer is formed in the diffusion window.