Laser ultrasonics-based material analysis system and method
US5781304A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 1997 |
| Grant date | Jul 14, 1998 |
| Priority date | — |
| Expiry date | Feb 14, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/02255
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed herein is an interferometric-based materials analysis system (10) that employs a novel combination of laser beam shaping and pointing techniques, the use of a low cost, rugged, and compact diode laser (22) as a detection laser, and the use of signal processing techniques that compensate for inherent instabilities and short-term drift in the diode laser. A matched filter processing technique is disclosed for processing interferometrically-obtained data points from a target being analyzed. The matched filter technique is shown to be especially useful for detecting and analyzing Lamb modes within thin targets, such as a silicon wafer undergoing a rapid thermal processing cycle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.