Method for fabricating liquid crystal display in which the pixel electrode has a particular connection to the drain electrode and is formed over a storage capacitor
US5784131A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1996 |
| Grant date | Jul 21, 1998 |
| Priority date | — |
| Expiry date | Oct 16, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136227
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Method for fabricating a liquid crystal display, is disclosed, including the steps of forming a first semiconductor layer in a thin film transistor region on a substrate and forming a second semiconductor layer in a storage capacitor region on the substrate, forming a gate insulating film on the first, and second semiconductor layers and forming a gate electrode over the first semiconductor layer in the thin film transistor region, injecting impurity ions into entire surface of the substrate using the gate electrode as a mask in forming a source region and a drain region in the first semiconductor layer, forming a first interlayer insulating film on entire surface of the substrate including the gate electrode and forming a first contact hole such that the first contact hole exposes the source region, forming a data line on a part of the first interlayer insulating film such that the data line is connected to the source region through the first contact hole, forming a second interlayer insulating film on entire surface of the substrate including the data line and forming second, third contact holes such that the second, and third contact holes expose the gate insulating film on the …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.