Semiconductor optical device and method for fabricating the same
US5784183A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 1996 |
| Grant date | Jul 21, 1998 |
| Priority date | — |
| Expiry date | Sep 4, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor optical device fabricating method for easily fabricating on a single substrate a plurality of distributed feedback lasers or distributed Bragg reflector lasers with uniform static and dynamic properties and individually different oscillation wavelengths. A plurality of pairs of stripe type insulating thin film masks are formed over that region of the semiconductor substrate which has optical waveguides formed therein for the lasers. Each pair of stripe type masks has a constant gap therebetween. With the masks in place, optical waveguide layers for the lasers are grown in crystallized fashion through metal organic vapor epitaxy. The stripe type masks in pairs differ dimensionally from one another. The semiconductor optical device thus fabricated comprises on one semiconductor substrate a plurality of distributed feedback lasers or distributed Bragg reflector lasers whose optical waveguide layers differ in both film thickness and composition and whose oscillation wavelengths also differ from one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.