Method of simultaneously forming MR sensors in a dual element MR head
US5784772A · kind A · utility
15Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1995 |
| Grant date | Jul 28, 1998 |
| Priority date | — |
| Expiry date | Dec 21, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49052
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention discloses an improved structure and method of forming a dual magnetoresistive element head. The dual magnetoresistive element head includes a first and a second magnetoresistive element and leads extending from opposite end segments of each magnetoresistive element. In one aspect of the present invention, the first and second magnetoresistive elements and the leads are simultaneously formed from a wafer comprising a first and a second magnetic layer separated by an intermediate gap layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.