Method of growing multilayer crystal films by metal organic vapor phase epitaxy
US5785755A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 1996 |
| Grant date | Jul 28, 1998 |
| Priority date | — |
| Expiry date | Mar 15, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are methods of preparing multilayer structures with InGaAsP layers of different compositions by metal organic vapor phase epitaxy, which result in formation of sharp heterointerfaces. After an InGaAsP well layer has been grown, the process is kept on standby with a flow of AsH.sub.3 and PH.sub.3, which are sources comprising elements of group V, at the well's composition ratios, and then with a flow of a source comprising an element of group V, including TBP (TBP/standby step), and an InGaAsP barrier layer is grown which has a smaller arsenic content than the well layer. TBP has a decomposition temperature approximately 100.degree. C. lower than PH.sub.3, and thus provides a phosphorus pressure which is five times or more as high as that of PH.sub.3 at identical growth temperatures and at identical V/III ratios. Therefore, during the process of growth of multilayer InGaAsP films, TBP may be used in a standby step with a flow of a source comprising an element of group V at the same composition ratio as is designed for an InGaAsP layer which has a smaller arsenic content than the previously grown layer and is subsequently grown, to prevent arsenic desorption from chamber wa…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.