Element-isolated hydrogen-terminated diamond semiconductor device and its manufacturing method
US5786604A · kind A · utility
4Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 13, 1995 |
| Grant date | Jul 28, 1998 |
| Priority date | — |
| Expiry date | Sep 13, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/87
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A diamond semiconductor device having at least one MESFET integrated on a single diamond substrate and insulated from other semiconductor elements is made by preparing a homoepitaxial diamond film 1 having a hydrogen-terminated surface; then making a drain ohmic contact 3, a source ohmic contact 4, both of gold, and a gate electrode 5 of aluminum on the film 1; and changing a site of the hydrogen-terminated surface other than the site for the MESFET to be terminated with atoms other than hydrogen atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.