Integrated horizontal unipolar transistor having a doped layer forming an internal gate of the transistor and at least one integrated capacitor having a first electrode connected to a source of the transistor and a second electrode to the fixed potential

US5786609A · kind A · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Josef Kemmer · Oberschleißheim, DE
• Gerhard Lutz · Munich, DE
• Rainer Richter · Munich, DE
• Karl-Ernst Ehwald · Frankfurt, DE

Key dates

• Filing date: May 23, 1996
• Grant date: Jul 28, 1998
• Expiry date: May 23, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/334

Abstract

A semiconductor detector structure consists of a unipolar or single-pole nsistor disposed or arranged on a substantially depleted semiconductor body, with a drain, a source, a resetting contact, a top gate and a potentially floating layer forming at least one gate of the unipolar transistor, as well as at least one capacitor. The source is directly connected to the first electrode or electrodes of the capacitor or capacitors. The capacitor or the capacitors are integrated jointly with or into the semiconductor structure.