Semiconductor light emitting element and method for fabricating the same
US5787104A · kind A · utility
41Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 19, 1996 |
| Grant date | Jul 28, 1998 |
| Priority date | — |
| Expiry date | Jan 19, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12528
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.