Optical semiconductor device for changing a beam diameter
US5787106A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 1996 |
| Grant date | Jul 28, 1998 |
| Priority date | — |
| Expiry date | Mar 8, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2077
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical semiconductor device has a greatly reduced transmission constant even when a reduction rate in the thickness of a core layer is small so that a relatively high beam-diameter increasing efficiency is obtained. The optical semiconductor device has a multilayered structure with a first end surface perpendicular to an optical axis of the optical semiconductor device and a second end surface opposite to the first end surface. A core layer has a first refractive index. A lower cladding layer is provided on a lower side of the core layer, the lower cladding layer having a second refractive index. An upper cladding layer is provided on an upper side of the core layer, the upper cladding layer having the second refractive index. A transmission constant reduction enhancing layer is provided between the lower cladding layer and the upper cladding layer, the transmission constant reduction enhancing layer having a third refractive index less than the first refractive index and the second refractive index. The optical semiconductor device includes a first area and a second area, a portion of the core layer in the first area having a uniform thickness, a portion of the core layer in t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.