Manufacturing method of a silicon wafer having a controlled BMD concentration
US5788763A · kind A · utility
61Cited by
4References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 7, 1996 |
| Grant date | Aug 4, 1998 |
| Priority date | — |
| Expiry date | Mar 7, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3225
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a heat history initializing step, a heat treatment in performed in an atmosphere including at least one of hydrogen, helium, and argon while the temperature is increased in a range of 700.degree. C. to 1,000.degree. C. at a rate of 15.degree.-1,000.degree. C./min. In a controlled nuclei growing step, a heat treatment is performed in the above atmosphere while the temperature is kept constant in a range of 850.degree. C. to 980.degree. C. for 0.5-60 minutes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.