Method for fabricating a laser diode
US5789275A · kind A · utility
8Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 26, 1996 |
| Grant date | Aug 4, 1998 |
| Priority date | — |
| Expiry date | Nov 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32391
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a method for fabricating a semiconductor laser diode in optical communication system, and the present invention uses both an oxide and a nitride pattern as an etch mask instead of the single oxide pattern in order to decrease the under cut of the edge of the oxide pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.