Multiquantum barrier Schottky junction device
US5789760A · kind A · utility
7Cited by
5References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 17, 1995 |
| Grant date | Aug 4, 1998 |
| Priority date | — |
| Expiry date | Apr 17, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/761
Abstract
There is provided a semiconductor device comprising a Schottky junction having a very low leakage current and a high forward voltage. The device comprises a Schottky junction realized by a semiconductor 4 and a metal 6 and a multiquantum barrier structure 5 disposed on the interface of said semiconductor 4 and said metal 6 and having an effect of reflecting incident carriers as waves in phase conditions capable of allowing mutual enhancement of the incident and reflected waves!.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.