Semi-insulating surface light emitting devices
US5789772A · kind A · utility
32Cited by
15References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 18, 1997 |
| Grant date | Aug 4, 1998 |
| Priority date | — |
| Expiry date | Aug 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2224
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Light emitting devices are requiring greater switching speeds to achieve greater modulation bandwidths. The problems of intrinsic capacitance associated with conventional semiconductor heterojunction devices are reduced by the reduction of pn junction capacitance as well as the use of a semi-insulating blocking layer and a conductive substrate. Non-linearity of optical power output versus bias current is addressed by a heat dissipation scheme using the semi-insulative and conductive layers of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.