Programmable anti-fuse device and method for manufacturing the same
US5789796A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 1997 |
| Grant date | Aug 4, 1998 |
| Priority date | — |
| Expiry date | Aug 25, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a technology of an electrically programmable anti-fuse device. The anti-fuse device comprises a semiconductor substrate provided with a plurality of functional elements; a field oxide layer formed on said semiconductor substrate, for electrically isolating the functional elements from each other; a predetermined pattern of a first electrode formed on said field oxide layer; a first insulating layer having two contact holes isolated from each other only on said first electrode, deposited on said field oxide layer as well as both end portions and center portion of said first electrode; a second insulating layer formed in said contact holes, to serves as an interlayer; and a second electrode formed on said second insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.