Bipolar transistor having an improved epitaxial base region
US5789800A · kind A · utility
17Cited by
5References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 17, 1997 |
| Grant date | Aug 4, 1998 |
| Priority date | — |
| Expiry date | Jan 17, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/177
Abstract
A base region structure of a bipolar transistor is provided. The base region structure is formed over both an epitaxial layer having a first conductivity type and an insulation film. The base region structure comprises a single layer having a first conductivity type. The single layer comprises both an epitaxial portion extending over the epitaxial layer and a polycrystal portion extending over the insulation film. An emitter region is formed at an upper part of the epitaxial portion. The epitaxial portion serves as a base region and the polycrystal portion serves as a base plug lead.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.