Dielectric thin film composition and thin-film EL device using same
US5789860A · kind A · utility
12Cited by
6References
8Claims
0Family size
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Key dates
| Filing date | Aug 12, 1996 |
| Grant date | Aug 4, 1998 |
| Priority date | — |
| Expiry date | Aug 12, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B33/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin-film electroluminescent device includes dielectric layers having improved dielectric characteristics. The device is fabricated by forming a first transparent electrode layer of ITO, a first dielectric layer, a luminescent layer, a second dielectric layer, and a second transparent electrode layer of ITO in this order on an insulating substrate. Each of the two dielectric layers is a film constituted by TaSnON. That is, the film includes tantalum, tin, oxygen, and nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.