High-frequency amplifier having variable gain in response to input power level
US5789983A · kind A · utility
10Cited by
2References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 21, 1996 |
| Grant date | Aug 4, 1998 |
| Priority date | — |
| Expiry date | Feb 21, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/372
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor amplifier such as a high-frequency amplifier has a barrier-gate transistor FETQ1 and a circuit connected to the gate of the barrier-gate transistor FETQ1 for controlling an amplification gain of the barrier-gate transistor FETQ1. In one embodiment, the circuit has a resistor RG1 being connected between a GND line and the gate of the barrier-gate transistor FETQ1 and a resistor RG2 being connected between the gate of the barrier-gate transistor FETQ1 and a VGG line for biassing the gate of barrier-gate transistor FETQ1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.