Semiconductor optical integrated device
US5790580A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1997 |
| Grant date | Aug 4, 1998 |
| Priority date | — |
| Expiry date | Mar 17, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention provides a semiconductor optical integrated device which includes (a) a semiconductor layer, (b) a plurality of masks formed on the semiconductor layer, each of the masks having a shape varying in an axial direction of a light waveguide, and (c) quantum well structure selectively grown on the semiconductor layer by metal organic vapor phase epitaxy (MOVPE). The quantum well structure includes a well layer having a thickness and a bandgap wherein at least one of the thickness and bandgap in a region is different from those in another regions, a shape of said masks in the region being different from that in the another regions. The invention provides many advantages, one of which is that light waveguides having different bandgaps from one another can be formed on a common plane by single selective growth. This makes it possible to communicate regions to one another with high optical coupling ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.