Oscillation polarization mode selective semiconductor laser, light transmitter and optical communication system using the laser
US5790581A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 9, 1997 |
| Grant date | Aug 4, 1998 |
| Priority date | — |
| Expiry date | Apr 9, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An oscillation polarization mode selective semiconductor laser for selectively performing one of oscillations in different polarization modes, is provided. The semiconductor laser includes a substrate, a laser structure formed on the substrate, and a phase shift region formed in the laser structure. The laser structure includes an active region in which population inversion is established by a current injection thereinto. At least a portion of the phase shift region has a strained quantum well structure in which degrees of a change in refractive index for internal light in different polarization modes due to a current injection thereinto are different from each other. The polarization mode of a light output from the laser can be changed by a small amount of current injected into the phase shift region, and fluctuation in the output intensity can be suppressed during a transition operation in polarization mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.