Apparatus for forming a pattern of nucleation sites
US5792270A · kind A · utility
Inventor
Key dates
| Filing date | Oct 21, 1993 |
| Grant date | Aug 11, 1998 |
| Priority date | — |
| Expiry date | Oct 21, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/106
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for producing a pattern of nucleation sites is disclosed. The method enables the growth of single crystal layers of a desired orientation on a suitable amorphous and/or non-single crystal surface. The method can be used to produce single crystal Si layers of a desired orientation on an amorphous layer, e.g. of SiO.sub.2 or Si.sub.3 N.sub.4. The method can provide for growth of (100) crystal orientation on SiO.sub.2. Semiconductor films may be accordingly grown on amorphous glass substrates for producing solar cells of high efficiency. A pattern of nucleation sites is created in amorphous layers, e.g. SiO.sub.2 on an IC wafer, by high-dose implantation through a single crystal mask having appropriate channeling directions at the desired lattice constants. Such implantation may be performed in a conventional ion implanter. Subsequent to creation of spaced-apart nucleation sites, epitaxial Si may be grown on such an SiO.sub.2 surface by CVD of Si. Similarly, nucleation sites for other materials can be created by using an appropriate mask for the desired single crystal orientation, and implanting/depositing the desired nucleation species through such a mask. Subs…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.