Plasma enhanced chemical processing reactor and method
US5792272A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 1997 |
| Grant date | Aug 11, 1998 |
| Priority date | — |
| Expiry date | Aug 12, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3322
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma enhanced chemical processing reactor and method. The reactor includes a plasma chamber including a first gas injection manifold and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wafer support and a second gas manifold. The plasma generated in the plasma chamber extends into the process chamber and interacts with the reactive gases to deposit a layer of material on the wafer. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support and applying r.f. gradient to induce diffusion of the plasma to the area proximate the wafer support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.