Method for fabricating silicon cells
US5792280A · kind A · utility
40Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 1996 |
| Grant date | Aug 11, 1998 |
| Priority date | — |
| Expiry date | Dec 27, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A process for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.