Semiconductor thin film sensor device with (110) plane
US5793073A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 1996 |
| Grant date | Aug 11, 1998 |
| Priority date | — |
| Expiry date | Mar 1, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01F1/6845
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor thin film sensor device including a semiconductor body formed of silicon having a (110) plane; a depression formed by an anisotropic etch applied to a first surface of the semiconductor body, wherein the first surface is substantially parallel to the (110) plane; and a thin film insulation member having a predetermined configuration suspended over the depression, and having substantially opposing ends connected to the first surface of the semiconductor body so that the thin film insulation member is bridged across the depression. Preferably, the depth of the depression is over 200 .mu.m. In one embodiment, the predetermined configuration of the thin film insulation member is oriented substantially parallel to a <100> direction of the semiconductor body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.