Gated field-emitters with integrated planar lenses
US5793152A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Dec 3, 1993 |
| Grant date | Aug 11, 1998 |
| Priority date | — |
| Expiry date | Dec 3, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J3/022
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention is a device for producing collimated electron beams. The device comprises a gated field emission array having at least one emission tip and a grid electrode having a grid opening disposed above the emission tip in a first direction. The device also comprises an integrated planar lens electrode for producing a focusing effect on electron beams emitted by the emission tip. The planar lens electrode has a lens edge disposed aside at a distance from the grid opening in a second direction perpendicular to the first direction. Preferably, the planar lens electrode is an integrated layer with the gated field emission array on a substrate. The grid electrode and the lens electrode can be on the same layer and separated by a gap of vacuum. The planar lens electrode can be above the grid electrode, separated by an insulative material. Similarly, the planar lens electrode can be below the grid electrode, and separated by an insulator material. Sometimes, the base electrode on which the tips are formed can act as a lens.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.