Angular distribution probe
US5793195A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1995 |
| Grant date | Aug 11, 1998 |
| Priority date | — |
| Expiry date | Aug 30, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J49/025
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Ion-beam probes of the planar, screened, and multilayer types are shown and described. These probes can detect the arrival of energetic ions and, in the latter type, also detect the arrival of energetic neutral molecules. A specific improvement is the use of a multilayer collection surface behind an aperture to measure the angular distribution of the etching contributions of energetic ions and/or energetic neutral molecules. After use, this multilayer collection surface provides a permanent record of the measurement. The improvement is also suitable for the adverse thermal and ion-etching environment of an energetic ion beam. In one embodiment, the aperture size and distance from the collection surface are such that a theoretical analysis of etch depth behind a straight-edge mask can be used to analyze the experimental results. The etch contour can be accurately reproduced from the measurement of half-maximum half angle, as long as the assumed distribution is incorporated in the measurement process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.