Semiconductor laser device
US5793785A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 1995 |
| Grant date | Aug 11, 1998 |
| Priority date | — |
| Expiry date | Jul 31, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3202
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Radiating light from a semiconductor laser element is radiated in a direction normal to the surface of a photodetector substrate. The semiconductor laser element and photodetector are disposed on the same plane. Specifically, a reflecting mirror surface formed of a slanting surface of (111) lattice plane having a ridge line of <110> direction is disposed on a silicon substrate of (100) lattice plane having an off-angle of 4.degree. to 14.degree. about an axis of <110> direction or on a silicon substrate of (511) lattice plane having an off-angle of 1.degree. to 11.degree. about an axis of <110> direction. The semiconductor laser chip is disposed at a position opposing to the reflecting mirror surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.