Temperature sensor and method
US5795069A · kind A · utility
45Cited by
33References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 2, 1997 |
| Grant date | Aug 18, 1998 |
| Priority date | — |
| Expiry date | Jan 2, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K7/24
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A temperature sensor using doped polysilicon resistors in a bridge configuration, an amplifier, and a doped polysilicon feedback resistor between the input and the output of the amplifier. The polysilicon resistors are doped with selected concentrations of impurities such as boron, phosphorus, arsenic or antimony. The resistors are doped to establish predetermined temperature coefficients so that the resistors exhibit a predetermined temperature dependence. This temperature dependence is utilized to create a temperature sensor that is stable, accurate, and rugged and that has a generally linear output to temperature response.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.