Sense amplifier for semiconductor memory device
US5796273A · kind A · utility
21Cited by
7References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 20, 1996 |
| Grant date | Aug 18, 1998 |
| Priority date | — |
| Expiry date | May 20, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/06
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense amplifier has a pair of output terminals and a first pair of pull-up transistors. A second pair of transistors is connected between the output terminals and a pull-down node. The gate electrodes of the second pair are cross-coupled to the output terminals. A third pair of transistors is connected between the output terminals and the pull-down node and have gate electrodes coupled to input potentials. A fourth pair of transistors is connected between the output terminals and the pull-down node and also have gate electrodes coupled to input potentials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.