Buried structure laser device for integrated photonic circuit and method of manufacture
US5796768A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 1996 |
| Grant date | Aug 18, 1998 |
| Priority date | — |
| Expiry date | Jun 28, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser device or double buried heterostructure optical guide amplifier and a simple method for the integration of this device into any photonic circuit. The device has a buffer layer doped with carriers of a first type and covering the entire surface of a substrate doped with carriers of the same type, a first layer playing the role of an optical guide formed by a non-doped quaternary compound and covering the entire surface of the buffer layer, an extremely thin intermediate layer, highly doped with carriers of the first type and covering the entire surface of the guiding layer, one or more strips of active layer playing the role of lasers or amplifiers formed by a non-doped quaternary compound, and a sheathing layer doped with carriers of a second type. The device can be used in the field of integrated optics of optical telecommunications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.