Solar cell and method for fabricating the same
US5797999A · kind A · utility
27Cited by
5References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 6, 1996 |
| Grant date | Aug 25, 1998 |
| Priority date | — |
| Expiry date | Sep 6, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
In a method for fabricating a solar cell, an amorphous silicon film of a first conductivity type is formed on a substrate, and nickel silicide is formed thereon. The amorphous silicon film is crystallized through heat treatment to obtain a crystalline silicon film of the first conductivity type. Residual nickel silicide on the surface of the crystalline silicon film of the first conductivity type is removed. Another crystalline silicon film of a second conductivity type is further formed on the surface of the crystalline silicon film of the first conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.