Titanium target for sputtering and production method for same
US5798005A · kind A · utility
26Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1996 |
| Grant date | Aug 25, 1998 |
| Priority date | — |
| Expiry date | Mar 29, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided are a titanium target material which can easily form a film in a narrow and deep contact hole and reduce the generation of PARTICLES. The present invention relates to a titanium target for sputtering, wherein X-ray diffraction intensity ratios on a sputtering plane are (0002)/(1011).gtoreq.0.8, (0002)/(1010).gtoreq.6; a recrystallized structure which has an average crystal grain size of 20 .mu.m or less and in which the proportion of crystal grains in which an acicular structure is present is 20% or less in terms of an area rate is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.