Monolithic integration of complementary transistors and an LED array
US5798535A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1996 |
| Grant date | Aug 25, 1998 |
| Priority date | — |
| Expiry date | Dec 20, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
Abstract
Monolithic integrated transistors and a light emitting diode matrix epitaxially grown on a semiconductor substrate. The matrix includes a plurality of LEDs organized into rows and columns, the LEDs being formed of layers of semiconductor material epitaxially grown on the substrate. A row driver for each row includes a transistor coupled to the matrix and a column driver for each column includes a complementary transistor coupled to the matrix. The transistor and the complementary transistor are each an HBT including layers of semiconductor material positioned on the semiconductor material forming the matrix.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.