Patent · US Expired

Monolithic integration of complementary transistors and an LED array

US5798535A · kind A · utility

59Cited by
3References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 20, 1996
Grant dateAug 25, 1998
Priority date
Expiry dateDec 20, 2016

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H29/142

Abstract

Monolithic integrated transistors and a light emitting diode matrix epitaxially grown on a semiconductor substrate. The matrix includes a plurality of LEDs organized into rows and columns, the LEDs being formed of layers of semiconductor material epitaxially grown on the substrate. A row driver for each row includes a transistor coupled to the matrix and a column driver for each column includes a complementary transistor coupled to the matrix. The transistor and the complementary transistor are each an HBT including layers of semiconductor material positioned on the semiconductor material forming the matrix.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.