Bipolar transistor for very high frequencies

US5798539A · kind A · utility

Assignee

• Daimler-Benz AG · DE

Inventor

• Helmut Jorke · Gerstetten, DE

Key dates

• Filing date: Apr 11, 1997
• Grant date: Aug 25, 1998
• Expiry date: Apr 11, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D10/841

Abstract

Bipolar transistor for very high frequencies having a delta-p-doped base layer and a drift zone between the base layer and an n.sup.+ -doped collector terminal layer, the drift zone, at least in a base-end region, being made of a material having a split conduction band structure which, in the drift direction, energetically favors light electrons.