Thin-film temperature sensor
US5798684A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 1996 |
| Grant date | Aug 25, 1998 |
| Priority date | — |
| Expiry date | Mar 28, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49085
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A thin-film temperature sensor with a robust bridge structure and a stable electric characteristic, as well as a method of manufacture thereof, is provided. Over the substrate 1 with the cavity 13 are formed electrode layers 6 in a bridge shape, whose electrodes 6A, 6B are bonded with thermal sensitive resistor films 7, 8, which are then covered with a protective insulating film 9, a buffer film 10 and a glass layer 11 in that order. The protective insulating film 9 and the glass layer 11 extend over the substrate 1 to increase the mechanical strength of the infrared sensitive element A. The sandwich structure of the insulating films 5, 9 holding the thermal sensitive resistor films 7, 8 in between and the use of the buffer film 10 combine to prevent electrical characteristic variations, which would otherwise be caused by changes in composition of the thermal sensitive resistor films 7, 8 during the heat treatment process. The glass layer 11 is formed of borosilicate glass to improve its infrared absorption characteristic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.