Vapor-phase growth apparatus and compound semiconductor device fabricated thereby
US5800622A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 1996 |
| Grant date | Sep 1, 1998 |
| Priority date | — |
| Expiry date | Jan 30, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/013
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a thermal radiation type substrate heating system of an MOCVD growth apparatus, a susceptor includes a semi-circular concavity is formed in each of wafer pockets at the forward area in a wafer rotation direction so that P-richness in a crystalline film grown at the gas upstream area is suppressed. Specifically, the conventional wafer holder exhibits a non-uniform temperature distribution so that the surface temperature is high at the gas upstream area and low at the downstream area. On the other hand, the structure according to the present invention realizes a high temperature at a wafer contact area and a low temperature at a wafer non-contact area, thus leading to a uniform surface temperature over the entire gas upstream and downstream areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.