Method for forming a fluorine containing silicon oxide film
US5800877A · kind A · utility
67Cited by
5References
10Claims
0Family size
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Key dates
| Filing date | Aug 9, 1996 |
| Grant date | Sep 1, 1998 |
| Priority date | — |
| Expiry date | Aug 9, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for forming a film by thermal CVD, a fluorine-containing silicon oxide film is formed on a substrate by thermal reaction of a mixed gas while heating the substrate. The mixed gas includes an organic silane having a Si-F bond, an organic silane having no Si-F bond, and ozone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.