Patent · US Expired

Method of making two-component nanospheres and their use as a low dielectric constant material for semiconductor devices

US5801092A · kind A · utility

45Cited by
16References
14Claims
0Family size

Inventor

Key dates

Filing dateSep 4, 1997
Grant dateSep 1, 1998
Priority date
Expiry dateSep 4, 2017

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2221/1047
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

This invention provides a process for making an insulation layer for use in microelectronic devices, whereby capacitive coupling and propagation delay in the microelectronic devices are reduced. This invention can include the formation of a stable solution of spherical particles consisting of a ceramic core 10 and a non-polar coating 20. This solution can be applied to an microelectronic substrate, and dried to form a continuous, porous layer. Novel methods are disclosed for bonding these particles together into an integral layer. Porous layers formed by the process of this invention possess a very low dielectric constant, and can be produced using equipment and techniques common and available to those skilled in the art of microelectronic fabrication.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.