Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film
US5801105A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 1996 |
| Grant date | Sep 1, 1998 |
| Priority date | — |
| Expiry date | Jun 14, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A multilayer thin film of the invention has an oxide thin film formed on a semiconductor single crystal substrate, and the oxide thin film includes at least one epitaxial thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium). Included is an oriented thin film formed on the oxide thin film from a dielectric material of perovskite or tungsten bronze type with its c-plane unidirectionally oriented parallel to the substrate surface. Consequently, there are provided a perovskite oxide thin film of (001) orientation, a substrate for an electronic device comprising the thin film, and a method for preparing the thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.