VOX film, wherein X is greater than 1.875 and less than 2.0, and a bolometer-type infrared sensor comprising the VOX film
US5801383A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Nov 22, 1996 |
| Grant date | Sep 1, 1998 |
| Priority date | — |
| Expiry date | Nov 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02628
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
At a heat treatment temperature in a reducing atmosphere of Ar and H.sub.2, a precursory film of V.sub.2 O.sub.5 is reduced into a VO.sub.x film with the heat treatment temperature selected in a predetermined temperature range between 350 .degree. C. and 450.degree. C., both exclusive, to control a resistivity of the VO.sub.x film, where x is greater than 1.875 and less than 2.0. The VO.sub.x film is not susceptible to a metal-semiconductor phase transition inevitable in VO.sub.2 at about 70.degree. C. and is excellent for use in a bolometer-type infrared sensor. When reduced at 350.degree. C. and 450.degree. C. the resistivity and its temperature coefficient of the VO.sub.x film at room temperature are 0.5 and 0.002 .OMEGA. cm and -2.2% and 0.2% per degree Celsius.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.