High efficiency, aluminum gallium arsenide LED arrays utilizing zinc-stop diffusion layers
US5801404A · kind A · utility
11Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 1996 |
| Grant date | Sep 1, 1998 |
| Priority date | — |
| Expiry date | May 29, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/14
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
An AlGaAs-based light emitting diode array is disclosed wherein each individual pixel contains a Zn-stop diffusion layer of p-type conductivity to control the diffusion process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.