Thickness mode acoustic wave resonator
US5801476A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 1996 |
| Grant date | Sep 1, 1998 |
| Priority date | — |
| Expiry date | Aug 9, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/172
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The invention is directed to resonators and more particularly to an MMIC-compatible resonator which can be fabricated on an MMIC chip using MMIC processing techniques. The MMIC-compatible resonator has a substrate approximately 100 microns thick made of semi-insulating GaAs and/or AlGaAs. The substrate flanks an air via on which is fabricated a thin film piezoelectric semi-insulating GaAs film, comprising the piezoelectrically active element. The piezoelectrically active element is flanked either laterally or from the top to bottom thereof by a pair of electrodes which serve to excite the thickness shear or thickness extensional mode of the thin film piezoelectrically active element. There are a number of III-V and II-VI binary compounds and ternary, and other piezoelectric semiconductor alloys, which can be used for the purposes of the invention. The thin film measures approximately 5 microns or less in thickness and is fabricated on the semi-insulating GaAs, on the 110!, 111! or 100! axis thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.