Depletion region stopper for PN junction in silicon carbide
US5801836A · kind A · utility
28Cited by
8References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 16, 1996 |
| Grant date | Sep 1, 1998 |
| Priority date | — |
| Expiry date | Jul 16, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor component comprises a pn junction having a first conductivity type layer and a second conductivity type layer, both being doped layers of silicon carbide (SiC), the first conductivity type layer being lower doped and being provided with a depletion region stopper (DRS) located outside the pn junction, the DRS having stepwise or continuously increasing effective sheet charge density of the first conducting type in a radial direction towards the outer edge of the semiconductor component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.