Stack type semiconductor laser device
US5802088A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1996 |
| Grant date | Sep 1, 1998 |
| Priority date | — |
| Expiry date | Sep 25, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0237
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A stack type semiconductor laser device, which has a large overlapped area of beam patterns made by laser beams irradiated from a plurality of semiconductor laser elements, is disclosed. A first semiconductor laser element is formed on an N-type semiconductor substrate and is bonded to a surface of a pedestal at the side of an N-type electrode thereof through a solder layer. On the other hand, a second semiconductor laser element is differently formed on a P-type semiconductor substrate, and an N-type electrode thereof is bonded to a P-type electrode of the first semiconductor laser element through a solder layer in such a way that the laser beam irradiation planes of both semiconductor laser elements face in the same direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.