Use of chemical mechanical polishing in micromachining
US5804084A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 1996 |
| Grant date | Sep 8, 1998 |
| Priority date | — |
| Expiry date | Oct 11, 2016 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0125
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A process for removing topography effects during fabrication of micromachines. A sacrificial oxide layer is deposited over a level containing functional elements with etched valleys between the elements such that the sacrificial layer has sufficient thickness to fill the valleys and extend in thickness upwards to the extent that the lowest point on the upper surface of the oxide layer is at least as high as the top surface of the functional elements in the covered level. The sacrificial oxide layer is then polished down and planarized by chemical-mechanical polishing. Another layer of functional elements is then formed upon this new planarized surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.