Semiconductor device having contact resistance reducing layer
US5804834A · kind A · utility
63Cited by
7References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1997 |
| Grant date | Sep 8, 1998 |
| Priority date | — |
| Expiry date | Jul 7, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/832
Abstract
In a wide band cap semiconductor, a GaP.sub.x N.sub.1-x (0.1.ltoreq.x.ltoreq.0.9) layer is inserted between a layer comprising AlGaInN and an electrode, The potential barrier between the electrode and the surface layer can be reduced. Contact resistance can be decreased, and ohmic contact can be easily taken up.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.