Compound semiconductor device and method of manufacture
US5804849A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 13, 1996 |
| Grant date | Sep 8, 1998 |
| Priority date | — |
| Expiry date | May 13, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/357
Abstract
A MESFET structure (20) and a method that minimizes the effects of processing steps and device performance of the MESFET structure (20). The MESFET structure (20) has a gate (30) positioned over a channel region (28) and between a source region (36) and a drain region (34). The MESFET structure (20) further includes a hole injector region (32) formed near the channel region (28). The hole injector region (32) injects holes beneath the channel region (28) which decrease the ability of the trap sites to attract electrons generated by impact ionization. Thus, this supply of holes beneath the channel region (28) prevents the effects of IV-kink and hysteresis caused by electrons that are accumulated in the trap sites.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.