Electronic circuit
US5804878A · kind A · utility
133Cited by
11References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 1996 |
| Grant date | Sep 8, 1998 |
| Priority date | — |
| Expiry date | Apr 24, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 .ANG., e.g., between 100 and 750 .ANG.. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.